symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol v ds i dm t j , t stg w t a =70c 1.28 junction and storage temperature range -55 to 150 c pulsed diode forward current b 20 power dissipation a t a =25c p d 2 30 -30 20 drain-source voltage 20 gate-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 6.9 5.8 30 2 1.28 -5 -6 2 1.28 a continuous drain current a t a =25c i d t a =70c pulsed drain current b -30 t a =70c power dissipation t a =25c p d reverse voltage 30 v continuous forward current a t a =25c i d 3 a t a =70c 2 junction and storage temperature range parameter maximum schottky units -55 to 150 -55 to 150 AO4607 features n-channel p-channel v ds (v) = 30v -30v i d = 6.9a (v gs =10v) -6a (v gs =1 - 0v) r ds(on) r ds(on) < 28m ? (v gs =10v) < 35m ? (v gs = - 10v) < 42m ? (v gs =4.5v) < 58m ? (v gs = - 4.5v) schottky vds (v) = 30v, if = 3a, vf<0.5v@1a the AO4607 uses advanced trench technology mosfets to provide excelle n r ds(on) and low gate charge. the complementary mosfets may be used in inverter and other applications. a schottky diode is co-packaged with the n- channel fet to minimize body diode losses. AO4607 is pb-free (meets rohs & sony 259 specifications). AO4607l is a green product ordering option. AO4607 and AO4607l are electrically identical. g1 s1 g2 s2/a d1 d1 d2/k d2/k 1 2 3 4 8 7 6 5 soic-8 g d s n-channel p-channe l g d s2 k a complementary enhancement mode field effect transistor general description www.freescale.net.cn 1 / 8
AO4607 symbol device typ ma x units n-ch 48 62.5 c/w n-ch 74 110 c/w r jl n-ch 35 60 c/w p-ch 48 62.5 c/w p-ch 74 110 c/w r jl p-ch 35 40 c/w schottky 47.5 62.5 c/w schottky 71 110 c/w r jl schottky 32 40 c/w maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s thermal characteristics: n-channel, schottky and p-channel r ja maximum junction-to-ambient a steady-state r ja maximum junction-to-ambient a steady-state parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s www.freescale.net.cn 2 / 8
ao460 7 symbol min typ max units bv dss 30 v 0.007 0.05 3.2 10 12 20 i gss 100 na v gs(th) 1 1.9 3 v i d(on) 20 a 22.5 28 t j =125c 31.3 38 34.5 42 m ? g fs 10 15.4 s v sd 0.45 0.5 v i s 5.5 a c iss 680 820 pf c oss 131 pf c rss 77 pf r g 3 3.6 ? q g (10v) 13.84 16.6 nc q g (4.5v) 6.74 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 ns t r 4.1 ns t d(off) 20.6 ns t f 5.2 ns t rr 13.7 16.5 ns q rr 4.1 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode+schottky continuous current dynamic parameters body-diode+schottky reverse recovery charge total gate charge i f =6.9a, di/dt=100a/ s turn-off delaytime turn-off fall time body-diode+schottky reverse recovery time i f =6.9a, di/dt=100a/ s input capacitance n-channel + schottky electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current. (set by schottky leakage) v r =30v ma gate-body leakage current v ds =0v, v gs =20v v r =30v, t j =125c v r =30v, t j =150c gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v r ds(on) static drain-source on-resistance forward transconductance m ? v gs =4.5v, i d =5.0a v ds =5v, i d =6.9a i s =1a v gs =10v, i d =6.9a body-diode+schottky forward voltage v gs =10v, v ds =15v, r l =2.2 ? , r gen =3 ? gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =15v, i d =6.9a v gs =0v, v ds =15v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance (fet+schottky) a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the schottky appears in parallel with the mosfet body diode, even though it is a separate chip. therefore, we provide the ne t forward drop, capacitance and recovery characteristics of the mosfet and schottky. however, the thermal resistance is specified for each chip separately rev 4: sept 2005 www.freescale.net.cn 3 / 8
AO4607 typical electrical and thermal characteristics: n-channe l 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode with parallel schottky characteristics (note f) i s amps 125c fet + schottky 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =6.9 125c 25c 25c i d =6.9 5v 6v www.freescale.net.cn 4 / 8
AO4607 typical electrical and thermal characteristics: n-channe l 0 2 4 6 8 10 02468101214 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics: mosfet + parallel schottky capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss (fet + schottky) c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1m s 0 .1 s 1 s 10s d c r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =6.9a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 s www.freescale.net.cn 5 / 8
AO4607 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.2 -2 -2.4 v i d(on) 30 a 28 35 t j =125c 37 45 44 58 m ? g fs 13 s v sd -0.76 -1 v i s -4.2 a c iss 920 1100 pf c oss 190 pf c rss 122 pf r g 3.6 4.4 ? q g (10v) 18.5 22.2 nc q g (4.5v) 9.6 nc q gs 2.7 nc q gd 4.5 nc t d(on) 7.7 ns t r 5.7 ns t d(off) 20.2 ns t f 9.5 ns t rr 20 24 ns q rr 8.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. rev 4: sept 2005 body diode reverse recovery time i f =-6a, di/dt=100a/ s body diode reverse recovery charge i f =-6a, di/dt=100a/ s turn-on delaytime v gs =-10v, v ds =-15v, r l =2.7 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-15v, i d =-6a reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz v gs =0v, v ds =0v, f=1mhz diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance v ds =-5v, i d =-6a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-6a m ? v gs =-4.5v, i d =-5a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v a gate-body leakage current v ds =0v, v gs =20v drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-24v, v gs =0v p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any ven application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. 2005 a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 6 / 8
AO4607 typical electrical and thermal characteristics: p-channel 0 5 10 15 20 25 30 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -6v -3.5v -4v -10v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 20 30 40 50 60 70 80 90 100 345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-6a 25c 125c i d =-6a -4.5v -5v www.freescale.net.cn 7 / 8
AO4607 typical electrical and thermal characteristics: p-channel 0 2 4 6 8 10 048121620 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s d c r ds(on) limited t j( m a x ) =150c, t a =25c v ds =-15v i d =-6a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 8 / 8
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